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06-28 19:25

“央行中的央行”拉响AI泡沫警报：万亿美元资本支出狂潮恐演变为漫长崩盘

“央行中的央行”拉响AI泡沫警报：万亿美元资本支出狂潮恐演变为漫长崩盘

06-28 18:45

SemiAnalysis：从基础设施到模型层，AI价值链上的财富迁移正在提速

SemiAnalysis：从基础设施到模型层，AI价值链上的财富迁移正在提速

06-28 17:51

AI基建“吞金”无底洞：科技巨头密集融资引爆债市担忧，高评级信用利差走阔

AI基建“吞金”无底洞：科技巨头密集融资引爆债市担忧，高评级信用利差走阔

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Invests no gambling

06-16

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Citrini: AMD and Apple are both betting on flash memory to replace DRAM, and memory costs may fall 55 times

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no gambling","avatar":"https://community-static.tradeup.com/news/36fa51bb4b75c0adc6108bf97e8a90fe","crmLevel":11,"crmLevelSwitch":1,"followedFlag":false,"authorIdStr":"4204818795581912","idStr":"4204818795581912"},"themes":[],"title":"","htmlText":"Good&nbsp;","listText":"Good&nbsp;","text":"Good","images":[],"top":1,"highlighted":1,"essential":1,"paper":1,"likeSize":1,"commentSize":0,"repostSize":0,"link":"https://ttm.financial/post/575869390493288","repostId":"2643373567","repostType":2,"repost":{"id":"2643373567","kind":"highlight","weMediaInfo":{"introduction":"追踪全球财经热点，精选影响您财富的资讯，投资理财必备神器！","home_visible":1,"media_name":"华尔街见闻","id":"1084101182","head_image":"https://static.tigerbbs.com/66809d1f5c2e43e2bdf15820c6d6897e"},"pubTimestamp":1781599906,"share":"https://ttm.financial/m/news/2643373567?lang=en_US&edition=fundamental","pubTime":"2026-06-16 16:51","market":"sh","language":"zh","title":"Citrini: AMD and Apple are both betting on flash memory to replace DRAM, and memory costs may fall 55 times","url":"https://stock-news.laohu8.com/highlight/detail?id=2643373567","media":"华尔街见闻","summary":"面对DRAM暴涨，AI存储向低成本闪存转移。AMD收购MEXT将AI驱动闪存技术引入数据中心，苹果推进端侧闪存方案。巨头看重闪存成本仅为DRAM的1/55，正重构AI存储架构。","content":"<p><html><head></head><body><p style=\"text-align: left;\">The reliance on expensive DRAM for AI inference is loosening.<a href=\"https://laohu8.com/S/AMD\">AMD</a>Announced the acquisition of memory optimization company MEXT to bring AI-driven flash memory optimization technology to data centers. This marks that AI storage architecture is undergoing a structural migration, and the core driver is only one number:<strong>Flash costs only 1/55 of DRAM.</strong></p><p><p style=\"text-align: left;\">On Monday, AMD announced the completion of its acquisition of MEXT for an undisclosed amount. AI-driven predictive memory technology developed by MEXT aims to make flash memory behave closer to DRAM, expanding the available memory capacity while maintaining performance and efficiency. AMD said the acquisition will expand its AI portfolio to help data center customers improve performance, reduce total cost of ownership and accelerate workload deployment. \"The demand for memory is growing in every category of enterprise computing,\" AMD said in a statement.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/a86b38617b68e608382e6d8db9bf1389\" data-align=\"center\" tg-width=\"1024\" tg-height=\"755\"/><span></span></p><p><p style=\"text-align: left;\">The news of the acquisition spurred AMD shares to rise 7.7% to $550.75 on Monday, as the market capitalization approached the $900 billion mark, and the overall S&P 500 index rose 1.8% on the day. AMD's cumulative gain this year has reached 323%. Citi upgraded AMD to Buy from Neutral last Friday and raised its price target to $575 from $460.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/fe5a732905489dfc96d3c249e9bea543\" data-align=\"center\" tg-width=\"882\" tg-height=\"984\"/><span></span></p><p><p style=\"text-align: left;\">It is worth noting that,<a href=\"https://laohu8.com/S/AAPL\">Apple</a>The \"LLM in a Flash\" end-side scheme began as early as 2024. Behind this layout is the intensifying DRAM supply crisis. According to TrendForce data, high bandwidth memory (HBM) already accounts for about a quarter of all DRAM wafer production capacity, and DRAM contract prices skyrocketed by about 90% quarter-on-quarter in the first quarter of 2026. Citrini Research pointed out that,<strong>The demand for AI storage is so large that it needs to be undertaken by multi-layer architectures. Flash memory does not replace HBM, but undertakes the overflow demand in the capacity dimension</strong>— — This architectural restructuring is repricing the entire AI storage industry chain.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/7db9e832d1e323bc33ae1b899213dd97\" data-align=\"center\" tg-width=\"1024\" tg-height=\"825\"/><span></span></p><p><h2 style=\"text-align: left;\">Memory tax crisis: bottlenecks spread from AI to the whole economy</h2><p style=\"text-align: left;\">According to<a href=\"https://laohu8.com/S/MS\">Morgan Stanley</a>Analyst Shawn Kim's team judged earlier this month,<strong>Soaring memory prices and supply scarcity are evolving into full-blown risks to the digital economy,</strong>\"From bottlenecks in AI infrastructure, it spreads to hardware margins, device affordability, cloud costs, inflation and even policy.\" This pressure has been backed up by concrete cases: Xbox CEO Asha Sharma said last week that memory costs have risen about fivefold over the past two years, preventing the company from producing the number of gaming consoles consumers need.</p><p><p style=\"text-align: left;\">HBM's continued encroachment into DRAM capacity is a central driver of this crisis. According to TrendForce<a href=\"https://laohu8.com/S/SMSN.UK\">Samsung</a>SK Hynix,<a href=\"https://laohu8.com/S/MU\">Micron</a>According to the disclosure data of manufacturers, HBM's proportion in DRAM wafer production capacity has climbed from 2% in 2020 to 25% estimated in 2026. Very large-scale cloud vendors pre-purchase future wafer output with multi-year contracts, further compressing the available production capacity of standard chips for mobile phones and PCs.</p><p><p style=\"text-align: left;\">The construction of new DRAM capacity also faces structural constraints. Production expansion relies on EUV lithography to print finer linewidths, with each EUV device selling for about $200 million, and investment in a new fab is easy<a href=\"https://laohu8.com/S/SBAY\">tens of billions</a>US dollars, and the construction period will take years in smooth circumstances. This supply rigidity is the fundamental reason for the sustainability of this round of shortage.</p><p><h2 style=\"text-align: left;\">55x Cost Difference: The Economic Logic of Flash Replacement</h2><p style=\"text-align: left;\">According to Citrini Research,<strong>Flash costs about 1/55 of DRAM per bit — about $0.05 per GB for QLC NAND, $2.75 for DDR5 DRAM, and up to $15 for HBM3E.</strong>The available space for this spread lies in the largest single memory consumption in AI inference-the KV cache (which records the context of all previous tags in each generation step of the model, which can grow to hundreds of GB in long conversations) -which requires read speed far less than the decoding path of model weights. For this kind of sequential data reading, the speed advantage of DRAM narrows significantly, while the capacity advantage of flash memory is fully reflected.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/8f9b061541f243d013842840b2a9af30\" data-align=\"center\" tg-width=\"1024\" tg-height=\"671\"/><span></span></p><p><p style=\"text-align: left;\">The expansion path of flash memory is also essentially different from that of DRAM. Flash increases capacity by stacking more cell layers vertically, relying on deposition and etching processes already available in existing plants, eliminating the need for new lithography nodes and taking up no EUV resources. Flash controllers are produced based on mature 6/7 nanometer processes, far from the bottleneck nodes that are restricting advanced processes.</p><p><p style=\"text-align: left;\">The previously published paper \"LLM in a Flash\" by Apple researchers provides methodological support: by storing the parameters of large language models in the device Flash memory and retrieving them to DRAM on demand, the model exceeding the upper limit of DRAM capacity can be run on the device with limited DRAM capacity, and the inference speed is 4 to 5 times and 20 to 25 times faster than the naive loading mode on the CPU and GPU respectively.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/1b87a29aa7ba0ff023c247b4f54e9951\" data-align=\"center\" tg-width=\"1024\" tg-height=\"630\"/><span></span></p><p><h2 style=\"text-align: left;\">Two paths: synchronous evolution of data center and end-side</h2><p style=\"text-align: left;\">AMD's acquisition focuses on data center scenarios. By integrating MEXT technology into AMD's data center portfolio, AMD seeks to help enterprise customers increase resource efficiency and reduce costs in AI workload deployments. Morgan Stanley's Shawn Kim team believes that despite the persistent memory shortage, AMD still has structural advantages in the competitive landscape of the cloud market-\"the demand for CPUs driven by agent AI is structurally conducive to the expansion of AMD's cloud market share.\" Citi's optimistic prediction for AMD is more based on its GPU sales and<a href=\"https://laohu8.com/S/NVDA\">NVIDIA</a>Positive competitive situation.</p><p><p style=\"text-align: left;\">The apple's path is on the side of the end. The \"LLM in a Flash\" scheme partly shifts the dependence of model reasoning on expensive cloud memory to the local Flash memory of the device, which reduces the cost of cloud computing and provides feasible memory architecture support for end-side AI applications.</p><p><p style=\"text-align: left;\">According to Citrini Research, the two major paths together point to the same conclusion:<strong>The memory level of AI reasoning is being reconstructed, and low-frequency KV cache, model weight and end-side data will gradually sink from high-priced HBM/DRAM to NAND Flash/SSD layer, forming a multi-level storage architecture.</strong></p><p><p style=\"text-align: left;\">This structural transformation is forming a multi-level transmission effect along the industrial chain. According to Citrini Research, the most direct beneficiary layer is the original NAND factory. High-capacity NAND, enterprise SSD and QLC NAND are the purest directions, including SanDisk,<a href=\"https://laohu8.com/S/WDC\">Western Digital</a>Micron and Kioxia.</p><p><p style=\"text-align: left;\">The SSD controller layer is considered to be the most persistent-the core of bringing flash really close to the memory experience lies in the controller, firmware, and NVMe architecture optimization, involving<a href=\"https://laohu8.com/S/SIMO\">Silicon Motion</a>Marvell, et al. The CXL/PCIe high-speed interconnect layer also benefits.</p><p></body></html></p>","collect":0,"html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" />\n<title>Citrini: AMD and Apple are both betting on flash memory to replace DRAM, and memory costs may fall 55 times</title>\n<style type=\"text/css\">\na,abbr,acronym,address,applet,article,aside,audio,b,big,blockquote,body,canvas,caption,center,cite,code,dd,del,details,dfn,div,dl,dt,\nem,embed,fieldset,figcaption,figure,footer,form,h1,h2,h3,h4,h5,h6,header,hgroup,html,i,iframe,img,ins,kbd,label,legend,li,mark,menu,nav,\nobject,ol,output,p,pre,q,ruby,s,samp,section,small,span,strike,strong,sub,summary,sup,table,tbody,td,tfoot,th,thead,time,tr,tt,u,ul,var,video{ font:inherit;margin:0;padding:0;vertical-align:baseline;border:0 }\nbody{ font-size:16px; line-height:1.5; color:#999; background:transparent; }\n.wrapper{ overflow:hidden;word-break:break-all;padding:10px; }\nh1,h2{ font-weight:normal; line-height:1.35; margin-bottom:.6em; }\nh3,h4,h5,h6{ line-height:1.35; margin-bottom:1em; }\nh1{ font-size:24px; }\nh2{ font-size:20px; }\nh3{ font-size:18px; }\nh4{ font-size:16px; }\nh5{ font-size:14px; }\nh6{ font-size:12px; }\np,ul,ol,blockquote,dl,table{ margin:1.2em 0; }\nul,ol{ margin-left:2em; }\nul{ list-style:disc; }\nol{ list-style:decimal; }\nli,li p{ margin:10px 0;}\nimg{ max-width:100%;display:block;margin:0 auto 1em; }\nblockquote{ color:#B5B2B1; border-left:3px solid #aaa; padding:1em; }\nstrong,b{font-weight:bold;}\nem,i{font-style:italic;}\ntable{ width:100%;border-collapse:collapse;border-spacing:1px;margin:1em 0;font-size:.9em; }\nth,td{ padding:5px;text-align:left;border:1px solid #aaa; }\nth{ font-weight:bold;background:#5d5d5d; }\n.symbol-link{font-weight:bold;}\n/* header{ border-bottom:1px solid #494756; } */\n.title{ margin:0 0 8px;line-height:1.3;color:#ddd; }\n.meta {color:#5e5c6d;font-size:13px;margin:0 0 .5em; }\na{text-decoration:none; color:#2a4b87;}\n.meta .head { display: inline-block; overflow: hidden}\n.head .h-thumb { width: 30px; height: 30px; margin: 0; padding: 0; border-radius: 50%; float: left;}\n.head .h-content { margin: 0; padding: 0 0 0 9px; float: left;}\n.head .h-name {font-size: 13px; color: #eee; margin: 0;}\n.head .h-time {font-size: 12.5px; color: #7E829C; margin: 0;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\nCitrini: AMD and Apple are both betting on flash memory to replace DRAM, and memory costs may fall 55 times\n</h2>\n<h4 class=\"meta\">\n<a class=\"head\" href=\"https://laohu8.com/wemedia/1084101182\">\n\n<div class=\"h-thumb\" style=\"background-image:url(https://static.tigerbbs.com/66809d1f5c2e43e2bdf15820c6d6897e);background-size:cover;\"></div>\n\n<div class=\"h-content\">\n<p class=\"h-name\">华尔街见闻 </p>\n<p class=\"h-time smaller\">2026-06-16 16:51</p>\n</div>\n</a>\n</h4>\n</header>\n<article>\n<p><html><head></head><body><p style=\"text-align: left;\">The reliance on expensive DRAM for AI inference is loosening.<a href=\"https://laohu8.com/S/AMD\">AMD</a>Announced the acquisition of memory optimization company MEXT to bring AI-driven flash memory optimization technology to data centers. This marks that AI storage architecture is undergoing a structural migration, and the core driver is only one number:<strong>Flash costs only 1/55 of DRAM.</strong></p><p><p style=\"text-align: left;\">On Monday, AMD announced the completion of its acquisition of MEXT for an undisclosed amount. AI-driven predictive memory technology developed by MEXT aims to make flash memory behave closer to DRAM, expanding the available memory capacity while maintaining performance and efficiency. AMD said the acquisition will expand its AI portfolio to help data center customers improve performance, reduce total cost of ownership and accelerate workload deployment. \"The demand for memory is growing in every category of enterprise computing,\" AMD said in a statement.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/a86b38617b68e608382e6d8db9bf1389\" data-align=\"center\" tg-width=\"1024\" tg-height=\"755\"/><span></span></p><p><p style=\"text-align: left;\">The news of the acquisition spurred AMD shares to rise 7.7% to $550.75 on Monday, as the market capitalization approached the $900 billion mark, and the overall S&P 500 index rose 1.8% on the day. AMD's cumulative gain this year has reached 323%. Citi upgraded AMD to Buy from Neutral last Friday and raised its price target to $575 from $460.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/fe5a732905489dfc96d3c249e9bea543\" data-align=\"center\" tg-width=\"882\" tg-height=\"984\"/><span></span></p><p><p style=\"text-align: left;\">It is worth noting that,<a href=\"https://laohu8.com/S/AAPL\">Apple</a>The \"LLM in a Flash\" end-side scheme began as early as 2024. Behind this layout is the intensifying DRAM supply crisis. According to TrendForce data, high bandwidth memory (HBM) already accounts for about a quarter of all DRAM wafer production capacity, and DRAM contract prices skyrocketed by about 90% quarter-on-quarter in the first quarter of 2026. Citrini Research pointed out that,<strong>The demand for AI storage is so large that it needs to be undertaken by multi-layer architectures. Flash memory does not replace HBM, but undertakes the overflow demand in the capacity dimension</strong>— — This architectural restructuring is repricing the entire AI storage industry chain.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/7db9e832d1e323bc33ae1b899213dd97\" data-align=\"center\" tg-width=\"1024\" tg-height=\"825\"/><span></span></p><p><h2 style=\"text-align: left;\">Memory tax crisis: bottlenecks spread from AI to the whole economy</h2><p style=\"text-align: left;\">According to<a href=\"https://laohu8.com/S/MS\">Morgan Stanley</a>Analyst Shawn Kim's team judged earlier this month,<strong>Soaring memory prices and supply scarcity are evolving into full-blown risks to the digital economy,</strong>\"From bottlenecks in AI infrastructure, it spreads to hardware margins, device affordability, cloud costs, inflation and even policy.\" This pressure has been backed up by concrete cases: Xbox CEO Asha Sharma said last week that memory costs have risen about fivefold over the past two years, preventing the company from producing the number of gaming consoles consumers need.</p><p><p style=\"text-align: left;\">HBM's continued encroachment into DRAM capacity is a central driver of this crisis. According to TrendForce<a href=\"https://laohu8.com/S/SMSN.UK\">Samsung</a>SK Hynix,<a href=\"https://laohu8.com/S/MU\">Micron</a>According to the disclosure data of manufacturers, HBM's proportion in DRAM wafer production capacity has climbed from 2% in 2020 to 25% estimated in 2026. Very large-scale cloud vendors pre-purchase future wafer output with multi-year contracts, further compressing the available production capacity of standard chips for mobile phones and PCs.</p><p><p style=\"text-align: left;\">The construction of new DRAM capacity also faces structural constraints. Production expansion relies on EUV lithography to print finer linewidths, with each EUV device selling for about $200 million, and investment in a new fab is easy<a href=\"https://laohu8.com/S/SBAY\">tens of billions</a>US dollars, and the construction period will take years in smooth circumstances. This supply rigidity is the fundamental reason for the sustainability of this round of shortage.</p><p><h2 style=\"text-align: left;\">55x Cost Difference: The Economic Logic of Flash Replacement</h2><p style=\"text-align: left;\">According to Citrini Research,<strong>Flash costs about 1/55 of DRAM per bit — about $0.05 per GB for QLC NAND, $2.75 for DDR5 DRAM, and up to $15 for HBM3E.</strong>The available space for this spread lies in the largest single memory consumption in AI inference-the KV cache (which records the context of all previous tags in each generation step of the model, which can grow to hundreds of GB in long conversations) -which requires read speed far less than the decoding path of model weights. For this kind of sequential data reading, the speed advantage of DRAM narrows significantly, while the capacity advantage of flash memory is fully reflected.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/8f9b061541f243d013842840b2a9af30\" data-align=\"center\" tg-width=\"1024\" tg-height=\"671\"/><span></span></p><p><p style=\"text-align: left;\">The expansion path of flash memory is also essentially different from that of DRAM. Flash increases capacity by stacking more cell layers vertically, relying on deposition and etching processes already available in existing plants, eliminating the need for new lithography nodes and taking up no EUV resources. Flash controllers are produced based on mature 6/7 nanometer processes, far from the bottleneck nodes that are restricting advanced processes.</p><p><p style=\"text-align: left;\">The previously published paper \"LLM in a Flash\" by Apple researchers provides methodological support: by storing the parameters of large language models in the device Flash memory and retrieving them to DRAM on demand, the model exceeding the upper limit of DRAM capacity can be run on the device with limited DRAM capacity, and the inference speed is 4 to 5 times and 20 to 25 times faster than the naive loading mode on the CPU and GPU respectively.</p><p><p class=\"t-img-caption\"><img src=\"https://community-static.tradeup.com/news/1b87a29aa7ba0ff023c247b4f54e9951\" data-align=\"center\" tg-width=\"1024\" tg-height=\"630\"/><span></span></p><p><h2 style=\"text-align: left;\">Two paths: synchronous evolution of data center and end-side</h2><p style=\"text-align: left;\">AMD's acquisition focuses on data center scenarios. By integrating MEXT technology into AMD's data center portfolio, AMD seeks to help enterprise customers increase resource efficiency and reduce costs in AI workload deployments. Morgan Stanley's Shawn Kim team believes that despite the persistent memory shortage, AMD still has structural advantages in the competitive landscape of the cloud market-\"the demand for CPUs driven by agent AI is structurally conducive to the expansion of AMD's cloud market share.\" Citi's optimistic prediction for AMD is more based on its GPU sales and<a href=\"https://laohu8.com/S/NVDA\">NVIDIA</a>Positive competitive situation.</p><p><p style=\"text-align: left;\">The apple's path is on the side of the end. The \"LLM in a Flash\" scheme partly shifts the dependence of model reasoning on expensive cloud memory to the local Flash memory of the device, which reduces the cost of cloud computing and provides feasible memory architecture support for end-side AI applications.</p><p><p style=\"text-align: left;\">According to Citrini Research, the two major paths together point to the same conclusion:<strong>The memory level of AI reasoning is being reconstructed, and low-frequency KV cache, model weight and end-side data will gradually sink from high-priced HBM/DRAM to NAND Flash/SSD layer, forming a multi-level storage architecture.</strong></p><p><p style=\"text-align: left;\">This structural transformation is forming a multi-level transmission effect along the industrial chain. According to Citrini Research, the most direct beneficiary layer is the original NAND factory. High-capacity NAND, enterprise SSD and QLC NAND are the purest directions, including SanDisk,<a href=\"https://laohu8.com/S/WDC\">Western Digital</a>Micron and Kioxia.</p><p><p style=\"text-align: left;\">The SSD controller layer is considered to be the most persistent-the core of bringing flash really close to the memory experience lies in the controller, firmware, and NVMe architecture optimization, involving<a href=\"https://laohu8.com/S/SIMO\">Silicon Motion</a>Marvell, et al. The CXL/PCIe high-speed interconnect layer also benefits.</p><p></body></html></p>\n</article>\n</div>\n</body>\n</html>\n","type":0,"thumbnail":"https://static.tigerbbs.com/a86b38617b68e608382e6d8db9bf1389","relate_stocks":{"LU2756315318.SGD":"ALLIANZ INCOME AND GROWTH \"AMG\" (SGDHDG) INC A","IE00BLSP4452.SGD":"Legg Mason ClearBridge - Tactical Dividend Income A Mdis SGD-H Plus","LU0949170772.SGD":"Blackrock Global Equity Income A6 SGD-H","LU1003077747.HKD":"BGF GLOBAL EQUITY INCOME \"A6\" (HKDHDG) INC","SG9999002232.USD":"Allianz Global High Payout USD","IE0004091025.USD":"BNY MELLON GLOBAL OPPORTUNITIES \"B\" (USD) ACC","SG9999002224.SGD":"Allianz Global High Payout SGD","LU0417517546.SGD":"Allianz US Equity Cl AT Acc SGD","BK4515":"5G概念","LU1934455863.HKD":"AB SICAV I LOW VOLATILITY TOTAL RETURN EQUITY PORT \"A\" (HKD) ACC","LU2360032135.SGD":"ALLSPRING GLOBAL EQUITY ENHANCED INCOME \"A\" (SGDHDG) INC","LU0738911758.USD":"Blackrock Global Equity Income A6 USD","LU1935043023.USD":"MANULIFE GF GLOBAL MULTI-ASSET DIVERSIFIED INCOME \"AA\" (USD) INC A","LU1868836591.USD":"CT (LUX) I AMERICAN \"1U\"(USD) ACC","LU0949170426.SGD":"Blackrock Global Multi-Asset Income A6 SGD-H","LU1868836757.USD":"CT (LUX) I AMERICAN FUND \"2\" (USD) ACC","LU2462157665.USD":"ALLIANZ GLOBAL INCOME \"A\" (USD) INC","LU1244550494.USD":"FRANKLIN GLOBAL MULTI-ASSET INCOME \"A\" (USDHEDGED) ACC","LU2756315664.SGD":"ALLIANZ INCOME AND GROWTH \"AMI\" (SGDHDG) INC","LU1868836914.USD":"CT (LUX) I AMERICAN \"3\" (USD) ACC","LU1046421795.USD":"富达环球科技A-ACC","LU0784384876.USD":"Blackrock Global Multi-Asset Income A6 USD","LU1868837136.USD":"CT (LUX) I AMERICAN \"8\" (USD) ACC","LU1974910355.USD":"Allianz Thematica Cl AMg DIS USD","LU0683600562.USD":"AB SELECT US EQUITY \"A\" (USD) ACC","IE00BFSS8Q28.SGD":"Janus Henderson Balanced A Inc SGD-H","LU2125154935.USD":"ALLSPRING (LUX) WF GLOBAL EQUITY ENHANCED INCOME \"I\" (USD) INC","LU1868837300.USD":"CT (LUX) I AMERICAN FUND \"9\" (USD) ACC","LU2237443382.USD":"Aberdeen Standard SICAV I - 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